TVS (Transient Voltage Suppressors) diode is a new type of high-efficiency circuit protection component invented on the basis of Zener diode process, also known as TVS tube, transient voltage suppression diode, transient suppression diode, transient voltage suppressor, avalanche breakdown diode, etc., there are unidirectional and bidirectional. When the two ends of the TVS diode are subjected to instantaneous high-energy impact, it changes the impedance value between the two ends from high impedance to low impedance at the speed of PS seconds to absorb an instantaneous large current and clamp the voltage at both ends at a predetermined value, thereby protecting the precision components behind from the impact of transient high-voltage spikes. DONGWO ELECTRONICS RESEARCH AND DEVELOPMENT, PRODUCTION, SALES OF TVS DIODE VARIETY, FULL MODEL, SPOT INVENTORY, LIGHTNING DELIVERY, FREE SAMPLES, A STRENGTH AND TECHNOLOGY OF CIRCUIT PROTECTION DEVICE SUPPLIERS, PRODUCT QUALITY AND RELIABILITY CAN BE COMPARABLE TO IMPORTED BRANDS (SUCH AS VISHAY, ONSEMI, LITTLEFUSE, ETC.).

TVS diodes are widely used in overvoltage protection of sensitive electronic parts with PS-level response speed, large transient power, low leakage current and capacitance, easy control of clamping voltage, small breakdown voltage deviation, high reliability, small size, easy installation, etc., and TVS diodes can be seen in automotive electronics, consumer electronics, industrial equipment, household appliances, communication equipment and other fields.

Generally, metal-oxide-semiconductor field-effect transistors, or metal-insulator-semiconductors. G: gate gate; S:source source; D: drain drain. The source and drain of the MOS tube are intermodular, and they are both N-type regions formed in the P-type backgate. In most cases, the two zones are the same, and even if the two ends are reversed, the performance of the device will not be affected. Such devices are considered symmetrical.

FETs are divided into PMOS tubes (P-channel type) and NMOS (N-channel type) tubes, which belong to insulated gate FETs.